PSMN7R0-100PS Datasheet, PDF (9/16 Pages) NXP Semiconductors – N-channel 100V 6.8 mΩ standard level MOSFET in TO220

NXP Semiconductors
PSMN7R0-100PS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
3.2
a
2.4
003aad774
1.6
0.8
0
-60
0
60
120
180
T_j (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
20
RDS on
(mΩ)
15
VGS (V) = 4.5
003aad563
10
5
6
5
10 20
0
0
20
40
60
80 _{ID (A)100}
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
PSMN7R0-100PS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 January 2010
© NXP B.V. 2010. All rights reserved.
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