PSMN7R0-100PS Datasheet, PDF (8/16 Pages) NXP Semiconductors – N-channel 100V 6.8 mΩ standard level MOSFET in TO220

NXP Semiconductors
PSMN7R0-100PS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
240
gfs
(S )
180
003aad572
60
ID
(A)
45
003aad568
120
30
Tj = 175 °C
60
15
Tj = 25 °C
0
0
50
100
150
200
250
ID (A)
0
0
2
4
6
VGS (V)
Fig 7. Forward transconductance as a function of
drain current; typical values
40
RDS on
(mΩ)
30
003aad571
20
10
0
0
5
10
15
20
VGS (V)
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
5
V_GS(th)
(V)
4
003aad280
max
3
typ
2
min
1
0
−60
0
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Gate-source threshold voltage as a function of
of gate-source voltage; typical values
junction temperature
PSMN7R0-100PS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 January 2010
© NXP B.V. 2010. All rights reserved.
8 of 16