PSMN7R0-100PS Datasheet, PDF (7/16 Pages) NXP Semiconductors – N-channel 100V 6.8 mΩ standard level MOSFET in TO220

NXP Semiconductors
PSMN7R0-100PS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
Table 6. Characteristics …continued
Symbol Parameter
Conditions
t_d(on)
turn-on delay time
t_r
rise time
t_d(off)
turn-off delay time
t_f
fall time
Source-drain diode
V_DS = 50 V; R_L = 2 Ω; V_GS = 10 V;
R_G(ext) = 4.7 Ω; T_j = 25 °C
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
t_rr
reverse recovery time I_S = 25 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 50 V
Min Typ Max Unit
-
34.6 -
ns
-
45.6 -
ns
-
103.9 -
ns
-
49.5 -
ns
-
0.8 1.2 V
-
64
-
ns
-
167 -
nC
300
ID
(A)
240
180
120
60
0
0
20
10
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6
5.5
5
4.5
VGS (V) = 4
1
2
3
4
VDS (V)
12000
C
(p F )
10000
8000
6000
4000
2000
0
003aad566
Cis s
Crs s
5
10
15
20
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Input and reverse transfer capacitances as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
PSMN7R0-100PS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 January 2010
© NXP B.V. 2010. All rights reserved.
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