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| PSMN7R0-100PS Datasheet, PDF (6/16 Pages) NXP Semiconductors – N-channel 100V 6.8 mΩ standard level MOSFET in TO220 | |||
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NXP Semiconductors
PSMN7R0-100PS
N-channel 100V 6.8 m⦠standard level MOSFET in TO220
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11 and 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 100 V; VGS = 0 V; Tj = 125 °C
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 13
RG
internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
see Figure 17 and 14
ID = 0 A; VDS = 0 V; VGS = 10 V
QGS
gate-source charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
see Figure 14 and 17
QGS(th)
pre-threshold
gate-source charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
see Figure 14
QGS(th-pl) post-threshold
gate-source charge
QGD
gate-drain charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
see Figure 14 and 17
VGS(pl)
gate-source plateau
voltage
VDS = 50 V; see Figure 14 and 17
Ciss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
Coss
output capacitance
see Figure 15
Crss
reverse transfer
capacitance
Min Typ Max Unit
90
-
-
V
100 -
-
V
1
-
-
V
2
3
4
V
-
-
4.6 V
-
-
150 µA
-
0.08 5
µA
-
10
100 nA
-
10
100 nA
-
-
12
mâ¦
-
15
19
mâ¦
-
5.4 6.8 mâ¦
-
0.74 -
â¦
-
125 -
nC
-
100 -
nC
-
28
-
nC
-
19.4 -
nC
-
9
-
nC
-
36
-
nC
-
4.3 -
V
-
6686 -
pF
-
438 -
pF
-
272 -
pF
PSMN7R0-100PS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 7 January 2010
© NXP B.V. 2010. All rights reserved.
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