PSMN5R6-100BS Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK Rev. 1 — 20 March 2012

NXP Semiconductors
PSMN5R6-100BS
N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK
10
R_DSon
(mΩ)
8
V_GS (V) = 4.5
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6
5
5.5 ⁶
4
8 10 15
2
0
20
40
60
80 _{ID (A)} 100
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
V_GS
(V)
8
6
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V_DS = 20 V
V_DS = 50 V
10⁵
C
(pF)
10⁴
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C_iss
4
2
0
0
40
80
120
160
Q_G (nC)
10³
10²
10^−1
1
C_oss
C_rss
10
10²
V_DS (V)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN5R6-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 March 2012
© NXP B.V. 2012. All rights reserved.
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