PSMN5R6-100BS Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK Rev. 1 — 20 March 2012

NXP Semiconductors
PSMN5R6-100BS
N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK
Table 7. Characteristics …continued
Symbol Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
I_S = 25 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 50 V
Min Typ Max Unit
-
0.79 1.2 V
-
67
-
ns
-
182 -
nC
160
I_D
(A)
120
80
6
5.5 5
8
10
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4.5
40
V_GS (V) = 4
0
0
0.5
1
1.5
2
V_DS (V)
250
g_fs
(S)
200
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150
100
50
0
0
20
40
60
80
100
I_D (A)
Fig 5. Output characteristics: drain current as a
Fig 6. Forward transconductance as a function of
function of drain-source voltage; typical values
drain current; typical values
160
I_D
(A)
120
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10
R_DSon
(mΩ)
8
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6
80
4
40
T_j = 175 °C
T_j = 25 °C
2
0
0
2
4
6
V_GS (V)
0
4
8
12
16
20
V_GS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
PSMN5R6-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 March 2012
© NXP B.V. 2012. All rights reserved.
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