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PSMN5R6-100BS Datasheet, PDF (5/15 Pages) NXP Semiconductors – N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK Rev. 1 — 20 March 2012
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NXP Semiconductors
PSMN5R6-100BS
N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
Minimum footprint; mounted on a
printed circuit board
Min Typ Max Unit
-
0.3 0.49 K/W
-
50
-
K/W
1
003aad684
Zth
(K/W)
10−1
10−2
δ = 0.5
0.2
0.1
0.05
0.02
single shot
10−3
10−6
10−5
10−4
10−3
10−2
P
tp
δ= T
tp
t
T
10−1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN5R6-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 March 2012
© NXP B.V. 2012. All rights reserved.
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