PSMN5R6-100BS Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK Rev. 1 — 20 March 2012

NXP Semiconductors
PSMN5R6-100BS
N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK
16000
C
(pF)
12000
8000
003aad686
C_iss
C_rss
4000
0
0
4
8
12
V_GS (V)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 9. Input and reverse transfer capacitances as a
Fig 10. Sub-threshold drain current as a function of
function of gate-source voltage, typical values
gate-source voltage
5
V_GS(th)
(V)
4
003aad280
max
3.2
a
2.4
003aad774
3
typ
1.6
2
min
0.8
1
0
−60
0
60
120
180
T_j (°C)
0
-60
0
60
120
180
T_j (°C)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Normalized drain-source on-state resistance
junction temperature
factor as a function of junction temperature
PSMN5R6-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 March 2012
© NXP B.V. 2012. All rights reserved.
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