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| PSMN4R0-30YL Datasheet, PDF (9/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
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NXP Semiconductors
PSMN4R0-30YL
N-channel TrenchMOS logic level FET
003aac640
100
IS
(A)
80
60
40
Tj = 150 °C
20
25 °C
0
0.0
0.2
0.4
0.6
0.8
1.0
VSD (V)
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical
values
PSMN4R0-30YL_1
Preliminary data sheet
Rev. 01 â 10 September 2008
© NXP B.V. 2008. All rights reserved.
9 of 13
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