PSMN4R0-30YL Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PSMN4R0-30YL
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
mounting base
see Figure 4
Min Typ Max Unit
-
-
1.82 K/W
10
Z_th(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
10^-1
0.02
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P
δ = ^tp
T
single shot
10^-2
t_p
t
T
10^-6
10^-5
10^-4
10^-3
10^-2
10^-1
t_p (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN4R0-30YL_1
Preliminary data sheet
Rev. 01 — 10 September 2008
© NXP B.V. 2008. All rights reserved.
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