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| PSMN3R3-40YS Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET | |||
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NXP Semiconductors
PSMN3R3-40YS
N-channel LFPAK 40 V 3.3 m⦠standard level MOSFET
20
RDSon
(mΩ)
15
VGS(V) = 5.5
003aae216
10
5
0
0
6
8
10
20
25
50
75
100
I D (A)
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
VGS
(V)
8
8V
6
4
2
003aae218
VDS= 20V
104
C
(pF)
103
003aae215
Ciss
Coss
Crss
0
0
20
40
60
QG (nC)
102
10-1
1
10
102
VDS(V)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN3R3-40YS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 â 8 March 2010
© NXP B.V. 2010. All rights reserved.
9 of 15
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