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PSMN3R3-40YS Datasheet, PDF (6/15 Pages) NXP Semiconductors – N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET
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NXP Semiconductors
PSMN3R3-40YS
N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
36
ID = 250 µA; VGS = 0 V; Tj = 25 °C
40
ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 -
ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 1
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11 2
and 10
IDSS
IGSS
RDSon
RG
drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C
-
VDS = 40 V; VGS = 0 V; Tj = 125 °C
-
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
drain-source on-state
resistance
VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 -
VGS = 10 V; ID = 15 A; Tj = 150 °C; see Figure 12 -
VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 -
internal gate resistance f = 1 MHz
-
(AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V
-
ID = 25 A; VDS = 20 V; VGS = 10 V; see Figure 14 -
and 15
QGS
QGS(th)
gate-source charge
pre-threshold
gate-source charge
ID = 25 A; VDS = 20 V; VGS = 10 V; see Figure 14 -
-
QGS(th-pl) post-threshold
-
gate-source charge
QGD
gate-drain charge
ID = 25 A; VDS = 20 V; VGS = 10 V; see Figure 14 -
and 15
VGS(pl)
gate-source plateau ID = 25 A; VDS = 20 V; see Figure 14 and 15
-
voltage
Ciss
input capacitance
VDS = 20 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
Coss
output capacitance
see Figure 16
-
Crss
reverse transfer
-
capacitance
td(on)
turn-on delay time
VDS = 20 V; RL = 0.8 Ω; VGS = 10 V;
-
tr
rise time
RG(ext) = 4.7 Ω
-
td(off)
turn-off delay time
-
tf
fall time
-
Source-drain diode
VSD
source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; see Figure 17 -
trr
reverse recovery time IS = 40 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
Qr
recovered charge
VDS = 20 V
-
PSMN3R3-40YS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 8 March 2010
Typ Max Unit
-
-
V
-
-
V
-
4.6 V
-
-
V
3
4
V
0.02 1
µA
10
100 µA
10
100 nA
10
100 nA
-
4.5 mΩ
[tbd] 5.9 mΩ
2.6 3.3 mΩ
0.67 -
Ω
39
-
nC
49
-
nC
13.8 -
nC
8.3 -
nC
5.5 -
nC
11.2 -
nC
4.9 -
V
2754 -
pF
600 -
pF
316 -
pF
21
-
ns
21
-
ns
38
-
ns
14
-
ns
0.95 1.2 V
44
-
ns
48
-
nC
© NXP B.V. 2010. All rights reserved.
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