PSMN3R3-40YS Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET

NXP Semiconductors
PSMN3R3-40YS
N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET
25
R_DSon
(mΩ)
20
15
10
5
0
4
003aae217
8
12
16
20
V_GS(V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aad280
max
typ
min
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Gate-source threshold voltage as a function of
of gate-source voltage; typical values.
junction temperature
10^−1
03aa35
2
I_D
(A)
a
10^−2
min typ max
1.5
10^−3
1
10^−4
03ne89
0.5
10^−5
10^−6
0
2
4
6
V_GS (V)
0
-60
0
60
120
180
Tj (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN3R3-40YS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 8 March 2010
© NXP B.V. 2010. All rights reserved.
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