PSMN3R3-40YS Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET

NXP Semiconductors
PSMN3R3-40YS
N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET
100
I_D
(A)
80
60
2010 8
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6
5.5
40
20
0
0
V_GS(V) = 4.5
0.25
0.5
0.75
1
V_DS(V)
80
I_D
(A)
60
40
20
0
0
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T_j = 175 °C
T_j = 25 °C
2
4
6
V_GS(V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
100
g_fs
(S)
80
60
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6000
C
(pF)
4000
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C_iss
40
C_rss
2000
20
0
0
20
40
60
80
I_D (A)
0
0
3
6
9
12
V_GS(V)
Fig 7. Forward transconductance as a function of
drain current; typical values
Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
PSMN3R3-40YS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 8 March 2010
© NXP B.V. 2010. All rights reserved.
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