PSMN1R3-30YL Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK

NXP Semiconductors
PSMN1R3-30YL
N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK
10^-1
I_D
(A)
10^-2
003aab271
min
typ
max
10^-3
10^-4
10^-5
10^-6
0
1
2 V_GS (V) 3
2
a
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1.5
1
0.5
0
−60
0
60
120 _{Tj (°C)} 180
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Gate charge waveform definitions
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
V_GS
(V)
8
003aad150
6
V_DS = 12V
4
2
0
0
25
50
75
100
Q_G (nC)
Fig 14. Gate-source voltage as a function of gate
charge; typical values
PSMN1R3-30YL_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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