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| PSMN1R3-30YL Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK | |||
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NXP Semiconductors
PSMN1R3-30YL
N-channel 30 V 1.3 m⦠logic level MOSFET in LFPAK
Table 6. Characteristics â¦continued
Symbol Parameter
Conditions
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VDS = 12 V; RL = 0.5 â¦; VGS = 4.5 V;
RG(ext) = 5.6 â¦
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V;
Qr
recovered charge
VDS = 20 V
8
RDS(on)
(mΩ)
6
003aad147
104
C
(pF)
4
Min Typ Max Unit
-
64
-
ns
-
108 -
ns
-
106 -
ns
-
52
-
ns
-
0.88 1.2 V
-
46
-
ns
-
53
-
nC
003aad152
Ciss
Crss
2
0
0
5
10
15
20
VGS (V)
103
10-1
1
10
VGS (V)
Fig 5. Drain-source on-state resistance as a function Fig 6. Input and reverse transfer capacitances as a
of gate-source voltage; typical values.
function of gate-source voltage; typical values
PSMN1R3-30YL_2
Product data sheet
Rev. 02 â 25 June 2009
© NXP B.V. 2009. All rights reserved.
7 of 14
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