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| PSMN1R3-30YL Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK | |||
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NXP Semiconductors
PSMN1R3-30YL
N-channel 30 V 1.3 m⦠logic level MOSFET in LFPAK
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
VDS
VDGR
VGS
ID
IDM
Ptot
Tstg
Tj
Tsld(M)
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering
temperature
Tj ⥠25 °C; Tj ⤠150 °C
Tj ⥠25 °C; Tj ⤠150 °C; RGS = 20 kâ¦
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
tp ⤠10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
-
30
V
-
30
V
-20 20
V
[1] -
100 A
[1] -
100 A
-
923 A
-
121 W
-55 150 °C
-55 150 °C
-
260 °C
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C;
tp ⤠10 µs; pulsed; Tmb = 25 °C
[1] -
-
100 A
923 A
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ⤠30 V;
drain-source avalanche RGS = 50 â¦; unclamped
energy
-
383 mJ
[1] Continuous current is limited by package.
250
ID
(A)
200
150
003aad141
120
Pder
(%)
80
03aa15
100
40
50
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain currnet as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN1R3-30YL_2
Product data sheet
Rev. 02 â 25 June 2009
© NXP B.V. 2009. All rights reserved.
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