PSMN1R3-30YL Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK

NXP Semiconductors
PSMN1R3-30YL
N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK
200
g_fs
(S)
150
003aad153
100
50
0
0
25
50
75
100
I_D (A)
100
I_D
(A)
80
60
3
V_GS (V) = 2.8
3.5
10
003aad144
2.6
40
2.4
20
2.2
0
0
1
2
3
V_DS (V)
Fig 7. Forward transconductance as a function of
drain current; typical values
100
I_D
(A)
75
003aad148
50
25
0
0
T_j = 150 °C
25 °C
1
2
3
V_GS (V)
Fig 8. Output characteristics: drain current as a
function of drain-source voltage; typical values
3
V_GS(th)
(V)
2
1.5
1
max
typ
min
003aab272
0.5
0
-60
0
60
120
180
T_j (°C)
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical
valuesvalues
Fig 10. Gate-source threshold voltage as a function of
junction temperature
PSMN1R3-30YL_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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