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| PSMN028-100YS Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel LFPAK 100V 27.5 mΩ standard level MOSFET | |||
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NXP Semiconductors
PSMN028-100YS
N-channel LFPAK 100V 27.5 m⦠standard level MOSFET
70
RDSon
(mΩ)
60
VGS(V) = 4
50
40
30
20
10
0
5
003aae073
4.3
4.5
5
6
10
10
15
ID (A)
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 14. Drain-source on-state resistance as a function Fig 15. Gate charge waveform definitions
of drain current; typical values
10
VGS
(V)
8
6
80V
20V
003aae075
VDS= 50V
104
C
(pF)
103
003aae072
Ciss
4
Coss
102
Crss
2
0
0
20
40
60
QG (nC)
10
10-1
1
10
102
VDS(V)
Fig 16. Gate-source voltage as a function of gate
charge; typical values
Fig 17. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN028-100YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 30 March 2010
© NXP B.V. 2010. All rights reserved.
9 of 15
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