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| PSMN028-100YS Datasheet, PDF (6/15 Pages) NXP Semiconductors – N-channel LFPAK 100V 27.5 mΩ standard level MOSFET | |||
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NXP Semiconductors
PSMN028-100YS
N-channel LFPAK 100V 27.5 m⦠standard level MOSFET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS
VGS(th)
drain-source
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
90
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
100
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 11 1
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 12 2
and 11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 11 -
VDS = 100 V; VGS = 0 V; Tj = 125 °C
-
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
VGS = 10 V; ID = 15 A; Tj = 100 °C;
-
see Figure 13
VGS = 10 V; ID = 15 A; Tj = 175 °C;
-
see Figure 13
VGS = 10 V; ID = 15 A; Tj = 25 °C;
-
see Figure 14
RG
internal gate resistance f = 1 MHz
-
(AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 15 A; VDS = 50 V; VGS = 10 V; see Figure 15 -
and 16
ID = 0 A; VDS = 0 V; VGS = 10 V
-
QGS
gate-source charge
ID = 15 A; VDS = 50 V; VGS = 10 V; see Figure 15 -
and 16
QGS(th)
pre-threshold
gate-source charge
ID = 15 A; VDS = 50 V; VGS = 10 V; see Figure 15 -
QGS(th-pl) post-threshold
-
gate-source charge
QGD
gate-drain charge
ID = 15 A; VDS = 50 V; VGS = 10 V; see Figure 15 -
and 16
VGS(pl)
gate-source plateau VDS = 50 V; see Figure 15 and 16
-
voltage
Ciss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
Coss
output capacitance
see Figure 17
-
Crss
reverse transfer
-
capacitance
td(on)
turn-on delay time
VDS = 50 V; RL = 3.3 â¦; VGS = 10 V;
-
tr
rise time
RG(ext) = 4.7 â¦; Tj = 25 °C
-
td(off)
turn-off delay time
-
tf
fall time
-
Source-drain diode
PSMN028-100YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 30 March 2010
Typ Max Unit
-
-
V
-
-
V
-
-
V
3
4
V
-
4.7 V
-
50
µA
0.02 2
µA
2
100 nA
2
100 nA
-
52
mâ¦
49.9 74.3 mâ¦
21.4 27.5 mâ¦
0.5 1.5 â¦
33
-
nC
25
-
nC
7.2 -
nC
5
-
nC
2.2 -
nC
10.3 -
nC
4.1 -
V
1634 -
pF
132 -
pF
85
-
pF
15
-
ns
14
-
ns
33
-
ns
12
-
ns
© NXP B.V. 2010. All rights reserved.
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