PSMN028-100YS Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel LFPAK 100V 27.5 mΩ standard level MOSFET

NXP Semiconductors
PSMN028-100YS
N-channel LFPAK 100V 27.5 mΩ standard level MOSFET
20
I_D
(A)
16
12
8
4
0
0
10 6 5 4.5
0.5
003aae068
4.3
V_GS(V) = 4
1
1.5
V_DS(V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aad280
max
typ
min
60
120
180
T_j (°C)
Fig 10. Output characteristics: drain current as a
Fig 11. Gate-source threshold voltage as a function of
function of drain-source voltage; typical values
junction temperature
10^−1
I_D
(A)
10^−2
10^−3
10^−4
03aa35
min typ max
3.2
a
2.4
1.6
003aad774
0.8
10^−5
10^−6
0
2
4
6
V_GS (V)
0
-60
0
60
120
180
T_j (°C)
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN028-100YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
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