PSMN028-100YS Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel LFPAK 100V 27.5 mΩ standard level MOSFET

NXP Semiconductors
PSMN028-100YS
N-channel LFPAK 100V 27.5 mΩ standard level MOSFET
Table 6.
Symbol
V_SD
t_rr
Q_r
Characteristics …continued
Parameter
Conditions
source-drain voltage
reverse recovery time
recovered charge
I_S = 15 A; V_GS = 0 V; T_j = 25 °C; see Figure 4
I_S = 5 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
V_DS = 50 V
Min Typ Max Unit
-
0.8 1.2 V
-
48.7 -
ns
-
95.7 -
nC
60
g_fs
(S)
40
003aae070
20
0
0
10
20
30
40
I_D (A)
40
I_D
(A)
30
20
10
0
0
003aae069
T_j = 175 °C
T_j = 25 °C
2
4
6
V_GS (V)
Fig 6. Forward transconductance as a function of
drain current; typical values
3000
C
(pF)
2000
003aae071
C_iss
C_rss
1000
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
45
R_DSon
(mΩ)
003aae074
35
25
0
0
2
4
6
8
10
V_GS (V)
15
0
5
10
15
20
V_GS (V)
Fig 8. Input and reverse transfer capacitances as a
Fig 9. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values.
PSMN028-100YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
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