PHPT61006PY Datasheet, PDF (9/16 Pages) NXP Semiconductors – 100 V, 6 A PNP high power bipolar transistor

NXP Semiconductors
PHPT61006PY
100 V, 6 A PNP high power bipolar transistor
10³
R_CEsat
(Ω)
10²
10
aaa-015665
10³
R_CEsat
(Ω)
10²
10
aaa-015666
(1)
(2)
(3)
1
10^-1
(1)
(2)
(3)
1
(4)
10^-1
10^-2
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
10^-2
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 20
(4) I_C/I_B = 10
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PHPT61006PY
Product data sheet
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21 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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