PHPT61006PY Datasheet, PDF (7/16 Pages) NXP Semiconductors – 100 V, 6 A PNP high power bipolar transistor

NXP Semiconductors
PHPT61006PY
100 V, 6 A PNP high power bipolar transistor
Symbol
f_T
C_c
Parameter
transition frequency
collector capacitance
Conditions
V_CE = -10 V; I_C = -500 mA;
f = 100 MHz; T_amb = 25 °C
V_CB = -10 V; I_E = 0 A; i_e = 0 A;
f = 1 MHz; T_amb = 25 °C
Min Typ Max Unit
-
116 -
MHz
-
52
-
pF
600
h_FE
400
200
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(1)
(2)
(3)
0
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
V_CE = -2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
-8
I_C
(A)
-6
I_B = -540 mA
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-360 mA
-240 mA _{-140 mA}
-4
-75 mA
-40 mA
-25 mA
-15 mA
-2
-10 mA
-5 mA
0
0
-1
-2
-3
-4
-5
V_CE (V)
T_amb = 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
PHPT61006PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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