PHPT61006PY Datasheet, PDF (1/16 Pages) NXP Semiconductors – 100 V, 6 A PNP high power bipolar transistor

PHPT61006PY
100 V, 6 A PNP high power bipolar transistor
21 January 2015
Product data sheet
1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted
Device (SMD) power plastic package.
NPN complement: PHPT61006NY
2. Features and benefits
• High thermal power dissipation capability
• High temperature applications up to 175 °C
• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified.
3. Applications
• Power management
• Load switch
• Linear mode voltage regulator
• Backlighting applications
• Motor drive
• Relay replacement
4. Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current
collector-emitter
saturation resistance
t_p ≤ 1 ms; single pulse
I_C = -6 A; I_B = -600 mA; t_p ≤ 300 µs;
δ ≤ 0.02; T_amb = 25 °C; pulsed
Min Typ Max Unit
-
-
-100 V
-
-
-6
A
-
-
-12 A
-
85
270 mΩ
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