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PHPT61006PY Datasheet, PDF (5/16 Pages) NXP Semiconductors – 100 V, 6 A PNP high power bipolar transistor
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NXP Semiconductors
PHPT61006PY
100 V, 6 A PNP high power bipolar transistor
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02 0.01
1
0
0.25
aaa-014225
10-1
10-5
10-4
10-3
10-2
10-1
1
FR4 PCB, standard footprint
10
102
103
tp (s)
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
aaa-014226
Zth(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
1
0.01
0.25
0
10-1
10-5
10-4
10-3
10-2
10-1
1
FR4 PCB, mounting pad for collector 6 cm2
10
102
103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PHPT61006PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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