PBHV8115T Datasheet, PDF (9/12 Pages) NXP Semiconductors – 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
11. Soldering
PBHV8115T
150 V, 1 A NPN high-voltage low V_CEsat (BISS) transistor
2.90
2.50
0.85
2
3.00 1.30
0.85
1
3
2.70
0.60
(3x)
1.00
3.30
0.50 (3x)
0.60 (3x)
sot023
Fig 13. Reflow soldering footprint SOT23 (TO-236AB)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
3.40
1.20 (2x)
4.60 4.00 1.20
2
1
3
solder lands
solder resist
occupied area
2.80
4.50
Dimensions in mm
preferred transport direction during soldering
sot023
Fig 14. Wave soldering footprint SOT23 (TO-236AB)
PBHV8115T_1
Product data sheet
Rev. 01 — 4 February 2008
© NXP B.V. 2008. All rights reserved.
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