PBHV8115T Datasheet, PDF(1/12 Page) NXP Semiconductors – 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

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PBHV8115T Datasheet, PDF (1/12 Pages) NXP Semiconductors – 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

PBHV8115T

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

Rev. 01 â 4 February 2008

Product data sheet

1. Product proï¬le

1.1 General description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a

SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBHV9115T.

1.2 Features

I High voltage

I Low collector-emitter saturation voltage VCEsat

I High collector current capability IC and ICM

I High collector current gain (hFE) at high IC

I AEC-Q101 qualiï¬ed

1.3 Applications

I LED driver for LED chain module

I LCD backlighting

I High Intensity Discharge (HID) front lighting

I Automotive motor management

I Hook switch for wired telecom

I Switch mode power supply

1.4 Quick reference data

Table 1.

Symbol

VCEO

hFE

Quick reference data

Parameter

collector-emitter voltage

collector current

DC current gain

Conditions

open base

VCE = 10 V; IC = 50 mA

Min Typ Max Unit

- 150 V

-1

100 - -

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