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PBHV8115T Datasheet, PDF (5/12 Pages) NXP Semiconductors – 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
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NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
ICBO
collector-base cut-off VCB = 120 V; IE = 0 A
-
current
VCB = 120 V; IE = 0 A;
-
Tj = 150 °C
ICES
collector-emitter
VCE = 120 V; VBE = 0 V
-
cut-off current
IEBO
emitter-base cut-off VEB = 4 V; IC = 0 A
-
current
hFE
VCEsat
VBEsat
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
VCE = 10 V
IC = 50 mA
IC = 100 mA
IC = 0.5 A
IC = 1 A
IC = 100 mA; IB = 10 mA
IC = 100 mA; IB = 20 mA
IC = 1 A; IB = 200 mA
IC = 1 A; IB = 200 mA
100
100
[1] 50
[1] 10
-
-
[1] -
[1] -
fT
transition frequency VCE = 10 V; IE = 10 mA;
-
f = 100 MHz
Cc
collector capacitance VCB = 20 V; IE = ie = 0 A;
-
f = 1 MHz
Ce
emitter capacitance VEB = 0.5 V;
-
IC = ic = 0 A; f = 1 MHz
td
delay time
tr
rise time
ton
turn-on time
VCC = 6 V; IC = 0.5 A;
-
IBon = 0.1 A;
-
IBoff = −0.1 A
-
ts
storage time
-
tf
fall time
-
toff
turn-off time
-
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Typ Max Unit
-
100 nA
-
10
µA
-
100 nA
-
100 nA
250 -
250 -
160 -
30
-
40
60
mV
33
50
mV
225 350 mV
1.1 1.2 V
30
-
MHz
5.7 -
pF
150 -
pF
7
-
ns
565 -
ns
572 -
ns
1530 -
ns
700 -
ns
2230 -
ns
PBHV8115T_1
Product data sheet
Rev. 01 — 4 February 2008
© NXP B.V. 2008. All rights reserved.
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