PBHV8115T Datasheet, PDF (2/12 Pages) NXP Semiconductors – 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low V_CEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Symbol
3
3
1
2
1
2
sym021
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PBHV8115T
-
plastic surface-mounted package; 3 leads
4. Marking
Table 4. Marking codes
Type number
PBHV8115T
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking code^[1]
W6*
Version
SOT23
PBHV8115T_1
Product data sheet
Rev. 01 — 4 February 2008
© NXP B.V. 2008. All rights reserved.
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