MMBZXVDL Datasheet, PDF (9/15 Pages) NXP Semiconductors – Double ESD protection diodes for transient overvoltage suppression

NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
100
C_d
(pF)
80
006aab328
60
40
20
0
0
(1)
(2)
(3)
(4)
5
10
15
20
25
V_R (V)
f = 1 MHz; T_amb = 25 °C
(1) MMBZ15VDL: unidirectional
(2) MMBZ15VDL: bidirectional
(3) MMBZ27VCL: unidirectional
(4) MMBZ27VCL: bidirectional
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
I
10²
I_RM
(nA)
10
006aab329
1
10^−1
10^−2
10^−3
−75
−25
25
75
MMBZ27VCL: V_RWM = 22 V
125
175
T_amb (°C)
Fig 6. Reverse leakage current as a function of
junction temperature; typical values
I_PPM
I_PP
−V_CL −V_BR −V_RWM
V
−I_RM
−I_R
−+
P-N
−I_PP
−I_PPM
006aab324
Fig 7. V-I characteristics for a unidirectional
ESD protection diode
−V_CL −V_BR −V_RWM
I_R
I_RM
−I_RM
−I_R
V_RWM V_BR V_CL
−
+
−I_PP
−I_PPM
006aab325
Fig 8. V-I characteristics for a bidirectional
ESD protection diode
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
Rev. 01 — 3 September 2008
© NXP B.V. 2008. All rights reserved.
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