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| MMBZXVDL Datasheet, PDF (6/15 Pages) NXP Semiconductors – Double ESD protection diodes for transient overvoltage suppression | |||
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NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
7. Characteristics
Table 10. Characteristics
Tamb = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Per diode
VF
forward voltage
MMBZ12VDL
MMBZ12VDL/DG
IF = 10 mA
MMBZ15VDL
MMBZ15VDL/DG
IF = 10 mA
MMBZ18VCL
MMBZ18VCL/DG
IF = 10 mA
MMBZ20VCL
MMBZ20VCL/DG
IF = 10 mA
MMBZ27VCL
MMBZ27VCL/DG
IF = 200 mA
MMBZ33VCL
MMBZ33VCL/DG
IF = 10 mA
VRWM
reverse standoff
voltage
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
IRM
reverse leakage current
MMBZ12VDL
MMBZ12VDL/DG
VRWM = 8.5 V
MMBZ15VDL
MMBZ15VDL/DG
VRWM = 12.8 V
MMBZ18VCL
MMBZ18VCL/DG
VRWM = 14.5 V
MMBZ20VCL
MMBZ20VCL/DG
VRWM = 17 V
MMBZ27VCL
MMBZ27VCL/DG
VRWM = 22 V
MMBZ33VCL
MMBZ33VCL/DG
VRWM = 26 V
Min Typ Max Unit
-
-
0.9 V
-
-
0.9 V
-
-
0.9 V
-
-
0.9 V
-
-
1.1 V
-
-
0.9 V
-
-
8.5 V
-
-
12.8 V
-
-
14.5 V
-
-
17
V
-
-
22
V
-
-
26
V
-
0.1 5
nA
-
0.1 5
nA
-
0.1 5
nA
-
0.1 5
nA
-
0.1 5
nA
-
0.1 5
nA
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
Rev. 01 â 3 September 2008
© NXP B.V. 2008. All rights reserved.
6 of 15
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