MMBZXVDL Datasheet, PDF (7/15 Pages) NXP Semiconductors – Double ESD protection diodes for transient overvoltage suppression

NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
Table 10. Characteristics …continued
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V_BR
breakdown voltage
I_R = 1 mA
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
C_d
diode capacitance
f = 1 MHz; V_R = 0 V
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
V_CL
clamping voltage
MMBZ12VDL
MMBZ12VDL/DG
I_PPM = 2.35 A
MMBZ15VDL
MMBZ15VDL/DG
I_PPM = 1.9 A
MMBZ18VCL
MMBZ18VCL/DG
I_PPM = 1.6 A
MMBZ20VCL
MMBZ20VCL/DG
I_PPM = 1.4 A
MMBZ27VCL
MMBZ27VCL/DG
I_PPM = 1 A
MMBZ33VCL
MMBZ33VCL/DG
I_PPM = 0.87 A
Min Typ
11.4 12
14.3 15
17.1 18
19
20
25.65 27
31.35 33
-
110
-
85
-
70
-
65
-
48
-
45
[1][2]
-
-
-
-
-
-
-
-
-
-
-
-
Max Unit
12.6 V
15.8 V
18.9 V
21
V
28.35 V
34.65 V
140 pF
105 pF
90
pF
80
pF
60
pF
55
pF
17
V
21.2 V
25
V
28
V
38
V
46
V
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
Rev. 01 — 3 September 2008
© NXP B.V. 2008. All rights reserved.
7 of 15