MMBZXVDL Datasheet, PDF (8/15 Pages) NXP Semiconductors – Double ESD protection diodes for transient overvoltage suppression

NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
Table 10. Characteristics …continued
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
S_Z
temperature coefficient I_Z = 1 mA
MMBZ12VDL
-
MMBZ12VDL/DG
MMBZ15VDL
-
MMBZ15VDL/DG
MMBZ18VCL
-
MMBZ18VCL/DG
MMBZ20VCL
-
MMBZ20VCL/DG
MMBZ27VCL
-
MMBZ27VCL/DG
MMBZ33VCL
-
MMBZ33VCL/DG
[1] In accordance with IEC 61643-321 (10/1000 µs current waveform).
[2] Measured from pin 1 or 2 to pin 3.
Typ Max Unit
8.1 -
11
-
14
-
15.8 -
23
-
29.4 -
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
10³
P_PPM
(W)
10²
006aab327
1.2
P_PPM
P_PPM(25°C)
0.8
006aab321
10
0.4
1
10^−2
10^−1
1
10
10²
10³
t_p (ms)
Fig 3.
MMBZ27VCL: unidirectional and bidirectional
T_amb = 25 °C
Rated peak pulse power as a function of
exponential pulse duration (rectangular
waveform); typical values
0
0
50
100
150
200
T_j (°C)
Fig 4.
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
Rev. 01 — 3 September 2008
© NXP B.V. 2008. All rights reserved.
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