BUK765R0-100E Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK765R0-100E
N-channel TrenchMOS standard level FET
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 14. Gate charge waveform definitions
200
I_S
(A)
150
10⁵
C
(pF)
10⁴
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C_iss
10³
C_oss
C_rss
10²
10^-1
1
10
10²
10³
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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100
50
T_j = 175 °C
T_j = 25 °C
0
0
0.3
0.6
0.9
1.2
V_SD (V)
V_GS = 0 V
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK765R0-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
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