BUK765R0-100E Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK765R0-100E
N-channel TrenchMOS standard level FET
10^-1
I_D
(A)
10^-2
10^-3
10^-4
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min
typ max
10
R_DSon
4.5
(mΩ)
8
6
4
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V_GS (V) = 5.0
5.5
6.0
7.0
10
10^-5
2
10^-6
0
2
4
6
V_GS (V)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
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3
a
2.4
1.8
1.2
0
0
50
100
T_j = 25 °C; t_p = 300 µs
150
200
I_D (A)
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
10
V_GS
(V)
8
6
14 V
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V_DS = 80 V
4
0.6
2
0
-60
0
60
120
180
T_j (°C)
0
0
50
100
T_j = 25 °C; I_D = 25 A
150
200
Q_G (nC)
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Gate-source voltage as a function of gate
charge; typical values
BUK765R0-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
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