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| BUK765R0-100E Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK765R0-100E
N-channel TrenchMOS standard level FET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9; see Figure 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 11; see Figure 12
ID = 25 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; see Figure 13; see Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
VDS = 80 V; RL = 3.2 â¦; VGS = 10 V;
RG(ext) = 5 â¦
from upper edge of mounting base to
centre of die
measured from source lead to source
bond pad; Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V
Min Typ Max Unit
100 -
-
V
90 -
-
V
2.4 3
4
V
1
-
-
V
-
-
4.5 V
-
0.15 2
µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
-
3.9 5
mâ¦
-
-
13.5 mâ¦
-
180 -
nC
-
34 -
nC
-
65 -
nC
-
8860 11810 pF
-
770 925 pF
-
546 750 pF
-
37 -
ns
-
62 -
ns
-
158 -
ns
-
80 -
ns
-
2.5 -
nH
-
7.5 -
nH
-
0.77 1.2 V
-
65 -
ns
-
191 -
nC
BUK765R0-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 16 May 2012
© NXP B.V. 2012. All rights reserved.
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