BUK765R0-100E Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK765R0-100E
N-channel TrenchMOS standard level FET
200
I_D
(A)
150
V_GS (V) = 10 6.0 5.5
003aaf634
5.0
100
4.5
50
15
R_DSon
(mΩ)
10
5
003aaf639
0
0
0.5
1
T_j = 25 °C; t_p = 300 μs
1.5
2
V_DS (V)
0
0
5
10
15
20
V_GS (V)
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
400
I_D
(A)
300
200
003aaf635
5
V_GS(th)
(V)
4
3
2
003aah027
max
typ
min
100
T_j = 175 °C
T_j = 25 °C
1
0
0
2
4
6
8
V_GS (V)
0
-60
0
60
120
180
T_j (°C)
Fig 8. Transfer characteristics: drain current as a
Fig 9. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
BUK765R0-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
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