BUK7575-100A Datasheet, PDF (9/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

NXP Semiconductors
BUK7575-100A
N-channel TrenchMOS standard level FET
3
03aa29
a
2
1
0
-60
0
60
120
180
T_j (°C)
I_S ⁴⁵
(A)
40
35
30
25
20
15
10
5
0
0.0
T_j = 175 °C
0.2 0.4 0.6
03nb26
T_j = 25 °C
0.8 1.0 1.2
V_SD (V)
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Reverse diode current as a function of reverse
diode voltage; typical values
C ²⁰⁰⁰
(pF) ₁₈₀₀ ^Ciss
1600
1400
1200 ^Coss
1000
800 C_rss
600
400
200
0
10^−2
10^−1
1
03nb33
10
10²
V_DS(V)
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
BUK7575-100A_2
Product data sheet
Rev. 02 — 30 July 2009
© NXP B.V. 2009. All rights reserved.
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