BUK7575-100A Datasheet, PDF (3/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

NXP Semiconductors
BUK7575-100A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_j ≥ 25 °C; T_j ≤ 175 °C
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; see Figure 1 and 3
T_mb = 100 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; t_p ≤ 10 µs; pulsed; see Figure 3
T_mb = 25 °C; see Figure 2
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
E_DS(AL)S
non-repetitive
I_D = 14 A; V_sup ≤ 100 V; R_GS = 50 Ω; V_GS = 10 V;
drain-source avalanche T_j(init) = 25 °C; unclamped
energy
Min Max Unit
-
100 V
-
100 V
-20 20
V
-
23
A
-
16.2 A
-
92
A
-
99
W
-55 175 °C
-55 175 °C
-
23
A
-
92
A
-
100 mJ
120
I_der
(%)
80
03aa24
120
P_der
(%)
80
03na19
40
40
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK7575-100A_2
Product data sheet
Rev. 02 — 30 July 2009
© NXP B.V. 2009. All rights reserved.
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