BUK7575-100A Datasheet, PDF (8/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

NXP Semiconductors
BUK7575-100A
N-channel TrenchMOS standard level FET
35
I_D
(A)
30
25
20
15
10
5
0
0
03nb29
T_j = 175 °C
T_j = 25 °C
2
4
6
8
V_GS (V)
10
V_GS
(V) ₉
8
7
6
5
4
3
2
1
0
0
03nb27
V_DS = 14 V
V_DS = 80 V
10
20
30
Q_G (nC)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source voltage as a function of turn-on
function of gate-source voltage; typical values
gate charge; typical values
5
V_GS(th)
(V)
4
max
03aa32
120
R_DSon
(mΩ)
100
V_GS (V)= 5.5
03nb32
6 6.5 ⁷ 8 ¹⁰
3
typ
80
2
min
60
1
0
−60
0
60
120
180
T_j (°C)
40
0
10
20
30
40
50
I_D (A)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
BUK7575-100A_2
Product data sheet
Rev. 02 — 30 July 2009
© NXP B.V. 2009. All rights reserved.
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