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BUK7575-100A Datasheet, PDF (1/13 Pages) NXP Semiconductors – TrenchMOS standard level FET | |||
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BUK7575-100A
N-channel TrenchMOS standard level FET
Rev. 02 â 30 July 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Suitable for standard level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V, 24 V and 42 V loads
 Automotive and general purpose
power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1 and 3
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Static characteristics
ID = 14 A; Vsup ⤠100 V;
RGS = 50 â¦; VGS = 10 V;
Tj(init) = 25 °C; unclamped
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 13 A;
Tj = 175 °C; see Figure 12
and 13
VGS = 10 V; ID = 13 A;
Tj = 25 °C; see Figure 12
and 13
Min Typ Max Unit
-
-
100 V
-
-
23 A
-
-
99 W
-
-
100 mJ
-
-
187 mâ¦
-
64 75 mâ¦
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