BUK752R3-40C Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 10. Gate-source threshold voltage as a function of Fig 11. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
4
R_DSon
(mΩ)
3
003aab006
2
a
1.5
03aa27
1
2
0.5
1
5
10
15
20
V_GS (V)
0
-60
0
60
120 _{Tj (°C)} 180
Fig 12. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK752R3-40C_3
Product data sheet
Rev. 03 — 26 January 2009
© NXP B.V. 2009. All rights reserved.
9 of 14