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BUK752R3-40C Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
VGSth
gate-source threshold
voltage
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
IDSS
drain leakage current
Dynamic characteristics
QG(tot)
QGS
QGD
VGS(pl)
total gate charge
gate-source charge
gate-drain charge
gate-source plateau
voltage
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
BUK752R3-40C_3
Product data sheet
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C; see
Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C; see
Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = 175 °C; see
Figure 10; see Figure 11
VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C; see
Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C; see
Figure 12; see Figure 13
VDS = 40 V; VGS = 0 V; Tj = 175 °C
ID = 25 A; VDS = 32 V; VGS = 10 V; see
Figure 15
ID = 25 A; VDS = 32 V; see Figure 15
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω
from drain lead 6 mm from package to
centre of die
from contact screw on mounting base to
centre of die
from source lead to source bonding pad
IS = 25 A; VGS = 0 V; Tj = 25 °C; see
Figure 14
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V
Rev. 03 — 26 January 2009
Min Typ Max Unit
40
-
-
V
36
-
-
V
2
3
4
V
-
-
4.4 V
1
-
-
V
-
0.02 1
µA
-
2
100 nA
-
2
100 nA
-
-
4.26 mΩ
-
1.96 2.3 mΩ
-
-
500 µA
-
175 -
nC
-
49
-
nC
-
67
-
nC
-
5
-
V
-
8492 11323 pF
-
1606 1927 pF
-
1101 1508 pF
-
65
-
ns
-
133 -
ns
-
146 -
ns
-
119 -
ns
-
4.5 -
nH
-
3.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
75
-
ns
-
57
-
nC
© NXP B.V. 2009. All rights reserved.
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