BUK752R3-40C Datasheet, PDF (10/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
200
003aab012
I_S
(A)
150
100
T_j = 175 °C
50
T_j = 25 °C
0
0.0
0.5
1.0
1.5 _{VSD (V)} 2.0
10
V_GS
(V)
8
6
4
2
0
0
003aab011
V_DD = 14 V
V_DD = 32 V
50
100
150
200
Q_G (nC)
Fig 14. Source current as a function of source-drain
voltage; typical values
14000
C
(pF)
10500
7000
3500
C_iss
C_oss
C_rss
Fig 15. Gate-source voltage as a function of gate
charge; typical values
003aab009
0
10^−2
10^−1
1
10
10²
V_DS (V)
Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
BUK752R3-40C_3
Product data sheet
Rev. 03 — 26 January 2009
© NXP B.V. 2009. All rights reserved.
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