BUK752R3-40C Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T_j ≥ 25 °C; T_j ≤ 175 °C
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; see Figure 1;
see Figure 3;
-
-
-20
[1][2] -
T_mb = 100 °C; V_GS = 10 V; see Figure 1;
T_mb = 25 °C; V_GS = 10 V; see Figure 1;
see Figure 3;
[1][2] -
[1][3] -
I_DM
peak drain current
T_mb = 25 °C; t_p ≤ 10 µs; pulsed; see Figure 3
-
P_tot
total power dissipation T_mb = 25 °C; see Figure 2
-
T_stg
storage temperature
-55
T_j
junction temperature
-55
Source-drain diode
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C;
T_mb = 25 °C;
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
[1][3] -
[1][2] -
-
E_DS(AL)S non-repetitive
I_D = 100 A; V_sup ≤ 40 V; R_GS = 50 Ω; V_GS = 10 V;
-
drain-source avalanche T_j(init) = 25 °C; unclamped
energy
E_DS(AL)R repetitive drain-source see Figure 4;
avalanche energy
[4][5] -
[6][7]
[1] Refer to document 9397 750 12572 for further information.
[2] Continuous current is limited by package.
[3] Current is limited by chip power dissipation rating.
[4] Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
[5] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[6] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[7] Refer to application note AN10273 for further information.
Max Unit
40
V
40
V
20
V
100 A
100 A
276 A
1104 A
333 W
175 °C
175 °C
276 A
100 A
1104 A
1.2 J
-
J
BUK752R3-40C_3
Product data sheet
Rev. 03 — 26 January 2009
© NXP B.V. 2009. All rights reserved.
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