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PSMN3R9-60PS Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
2.4
a
1.8
003aag814
1.2
0.6
0
-60
0
60
120
180
Tj (°C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig. 13. Gate charge waveform definitions
10
VGS
(V)
8
6
4
003aah402
14 V
VDS= 48V
2
0
0
40
80 QG (nC) 120
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
104
C
(pF)
003aah403
Ciss
103
Coss
Crss
102
10-1
1
10 VDS(V) 102
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN3R9-60PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 February 2013
© NXP B.V. 2013. All rights reserved
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