PSMN3R9-60PS Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78

NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
400
I_D
(A)
300
200
100
003aah397
T_j = 175 °C
T_j = 25 °C
5
V_GS(th)
(V)
4
3
2
1
003aah027
max
typ
min
0
0
2
4
6 _VGS(V) 8
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
T_j (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
10^-1
I_D
(A)
10^-2
10^-3
003aah028
min
typ max
15
R_DSon
(mΩ)
10
003aah400
5
5.5
6
10^-4
10^-5
10^-6
0
2
4
6
V_GS(V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
5
8
V_GS(V) = 10
0
0
120
240
I_D (A) ³⁶⁰
T_j = 25 °C; t_p = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
PSMN3R9-60PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 February 2013
© NXP B.V. 2013. All rights reserved
7 / 13