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| PSMN3R9-60PS Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 | |||
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NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 m⦠standard level MOSFET in SOT78
Symbol
Parameter
Conditions
QGD
gate-drain charge
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 15
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 45 V; RL = 1.8 Ω; VGS = 10 V;
RG(ext) = 5 Ω
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V
360
ID
10 8
(A)
240
003aah394
6
5.5
15
RDSon
(mΩ)
10
Min Typ Max Unit
-
33
-
nC
-
5600 -
pF
-
740 -
pF
-
460 -
pF
-
25.3 -
ns
-
41.4 -
ns
-
62.7 -
ns
-
45
-
ns
-
0.8 1.2 V
-
39
-
ns
-
51
-
nC
003aah395
120
5
5
VGS(V) = 4.5
0
0
1
2
3 VDS(V) 4
0
0
5
10
15 VGS(V) 20
Fig. 6.
Tj = 25 °C; tp = 300 μs
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
PSMN3R9-60PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 February 2013
© NXP B.V. 2013. All rights reserved
6 / 13
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