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| PSMN3R9-60PS Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 | |||
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NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 m⦠standard level MOSFET in SOT78
Symbol
Parameter
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tmb = 25 °C; Fig. 2
Tmb = 25 °C
[1]
pulsed; tp ⤠10 µs; Tmb = 25 °C
ID = 130 A; Vsup ⤠60 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[1] Continuous current is limited by package.
200
ID
(A)
160
(1)
120
003aak454
120
Pder
(%)
80
Min Max Unit
-
263 W
-55 175 °C
-55 175 °C
-
260 °C
-
130 A
-
705 A
-
283 mJ
03aa16
80
40
40
0
0
30
60
90 120 150 180
Tj (°C)
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN3R9-60PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 February 2013
© NXP B.V. 2013. All rights reserved
3 / 13
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